s m d ty p e i c w w w . k e x i n . c o m . c n 1 s m d ty p e m os f e t f e a tu r e s v d s ( v ) = 3 0 v i d = 5 . 8 a ( v g s = 1 0 v ) r d s ( o n ) 2 8 m ( v g s = 1 0 v ) r d s ( o n ) 3 3 m ( v g s = 4 . 5 v ) r d s ( o n ) 5 2 m ( v g s = 2 . 5 v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . g a t e 2 . s ou r c e 3 . d r a i n n-channel enhancement m ode field effect transistor absolut e maximum r atings ta = 25 t i n u g n i t a r l o b m y s r e t e m a r a p v e g a t l o v e c r u o s - n i a r d d s 30 v v e g a t l o v e c r u o s - e t a g g s 12 v continuou s drain current t a = 2 5 5.8 t a = 7 0 4.9 i * t n e r r u c n i a r d d e s l u p d m 30 p o w er di s s ipa t i o n t a = 2 5 1.4 t a = 7 0 1 t herma l res is t anc e. j unction - to-ambien t r t hj a 125 /w t her ma l re sis tan ce. junc t ion - t o-cas e r t h c 60 /w junction and storage temperature rang e t j , t s t g - 55 to 150 * repet it iv e r at ing , puls e w i dt h limit e d b y junc t io n t empera t ure . i d p d a w ao 3 4 0 0 ( k o 3 4 0 0 )
w w w . k e x i n . c o m . c n 2 s m d ty p e i c s m d ty p e m o s f e t electrical characteristic s ta = 25 parameter s y m bol testcondition s m in ty p m ax unit drain-sourc e breakdow n v oltage v dss i d =25 0 a , v g s = 0 v 30 v v d s = 24v , v g s 1 v 0 = v d s = 24v , v g s = 0 v ,t j = 5 5 5 i t n e r r u c e g a k a e l y d o b - e t a g g s s v d s = 0v , v g s = 12v 100 na v e g a t l o v d l o h s e r h t e t a g g s ( t h ) v d s = v g s i d =25 0 a 0.7 1.1 1.4 v v g s = 10v , i d 8 2 8 . 2 2 a 8 . 5 = v g s = 10v , i d =5.8a t j =12 5 32 39 v g s = 4. 5v , i d 3 3 3 . 7 2 a 5 = m v g s = 2. 5v , i d 2 5 3 . 3 4 a 4 = m i t n e r r u c n i a r d e t a t s n o d ( on ) v g s = 4. 5v , v d s a 0 3 v 5 = g e c n a t c u d n o c s n a r t d r a w r o f fs v d s = 5v , i d s 5 1 0 1 a 5 = c e c n a t i c a p a c t u p n i iss 823 1050 pf c e c n a t i c a p a c t u p t u o o s s 99 pf rev ers e t rans f e r capac it anc e c r s s 77 pf r e c n a t s i s e r e t a g g v g s = 0v , v d s 3.6 4 . 1 z h m 1 = f , v 0 = q e g r a h c e t a g l a t o t g 9.7 12 nc q e g r a h c e c r u o s e t a g g s 1.6 nc q e g r a h c n i a r d e t a g g d 3.1 nc t e m i t y a l e d n o - n r u t d ( o n ) 3.3 5 ns t e m i t e s i r n o - n r u t r 4.8 7 ns t e m i t y a l e d f f o - n r u t d ( o f f ) 26.3 40 ns t e m i t l l a f f f o - n r u t f 4.1 6 ns b od y diod e reve r s e rec ov e r y t i m e t r r i f = 5a , d i /d t = 100a / s 16 20 ns body diod e revers e recover y charg e q r r i f = 5a , d i /d t = 100a / s 8.9 12 nc maximum b ody - diod e continuou s curren t i s 2.5 a v e g a t l o v d r a w r o f e d o i d s d i s = 1a , v g s v 1 1 7 . 0 v 0 = v g s = 10v , v d s = 15v , r l =2.7 ,r g e n = 3 r ds(on) s t a ti c d rain -s ou rce o n-res is t anc e i d s s zero gate voltage drain current a m v g s = 0v , v d s = 15v , f= 1mh z v g s = 4. 5v , v d s = 15v , i d =5.8a ao 3 4 0 0 ( k o 3 4 0 0 ) m a r k i n g m a r k i n g a 0*
s m d ty p e w w w . ke x in . com . c n 3 m osfe t ao 3 4 0 0 ( k o 3 4 0 0 ) ty pic al c har ac t er is it ic s 0 5 10 15 20 25 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a ) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a ) 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r d s(o n ) ( m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a ) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n o r m a li z e d o n -res i sta n c e v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s(o n ) ( m ? ) 25c 125 c v ds =5v v gs =2.5v v gs =4.5v v gs =10 v i d =5a 25 c 125c
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . ao 3 4 0 0 ( k o 3 4 0 0 ) ty pic al c har ac t er is it ic s 0 1 2 3 4 5 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v g s ( v o l ts ) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics ca p ac i ta n ce ( pf ) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o r m a li z e d t r a n s i e n t th e r m a l res i sta n c e c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a m p s ) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c
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